1999. 11. 30 1/1 semiconductor technical data MMBTA05 epitaxial planar npn transistor revision no : 1 driver stage amplifier applications. voltage amplifier applications. features complementary to mmbta55. driver stage application of 20 to 25 watts amplifiers. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 100 na emitter cut-off current i ceo v ce =60v, i c =0 - - 100 na collector-emitter breakdown voltage v (br)ceo i c =5ma, i b =0 60 - - v dc current gain h fe (1) v ce =1v, i c =10ma 100 - - h fe (2) v ce =1v, i c =100ma 100 - - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - - 0.25 v base-emitter voltage v be v ce =1v, i c =100ma - - 1.2 v transition frequency f t v ce =1v, i c =10ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 10 - pf characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c * 350 mw junction temperature t j 150 1 storage temperature t stg -55 150 1 * : package mounted on 99.5% alumina 10 ' 8 ' 0.6mm. type name marking lot no. acx
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